s mhop microelectronics c orp. a STS8207 symbol v ds v gs i dm 100 w a p d c 1.25 -55 to 150 i d units parameter 20 4.5 18 c/w v v 12 t a =25 c gate-source voltage drain-source voltage thermal characteristics product summary v dss i d r ds(on) (m @ vgs=3.7v features super high dense cell design for low r ds(on) . rugged and reliable. suface mount package. absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous a -pulsed b a maximum power dissipation a operating junction and storage temperature range t j , t stg thermal resistance, junction-to-ambient r ja ver 1.0 www.samhop.com.tw may,07,2012 1 details are subject to change without notice. a t a =25 c esd protected. s 1 s 2 g 1 d 1 g 2 d 2 t a =70 c 3.6 a t a =70 c 0.8 w dual n-channel enhancement mode field effect transistor g r e r r p p r p p o r r o e g g @ vgs=2.5v 34 @ vgs=4.0v 40 @ vgs=3.1v
electrical characteristics ( t a =25 c unless otherwise noted ) STS8207 ver 1.0 www.samhop.com.tw may,07,2012 2 symbol min typ max units bv dss 20 v 1 i gss 10 ua v gs(th) 0.5 v r ds(on) drain-source on-state resistance i dss ua gate threshold voltage v ds =v gs ,i d =1ma v ds =16v , v gs =0v v gs =12v,v ds =0v zero gate voltage drain current gate-body leakage current off characteristics parameter conditions drain-source breakdown voltage v gs =0v,i d =250ua on characteristics 0.9 1.5 g fs 12 s v sd c iss 240 pf c oss 120 pf c rss 57 pf q g 30 nc 92 nc q gs 240 nc q gd 145 t d(on) 6.4 ns t r 1.3 ns t d(off) 3.7 ns t f ns gate-drain charge v ds =10v,v gs =0v switching characteristics gate-source charge v dd =16v i d =2.25a v gs =4v r gen = 6 ohm total gate charge rise time turn-off delay time fall time turn-on delay time v ds =5v,i d =2.25a input capacitance output capacitance dynamic characteristics forward transconductance diode forward voltage reverse transfer capacitance v gs =2.5v , i d =2.25a m ohm c f=1.0mhz c v ds =16v,i d =4.5a, v gs =4v drain-source diode characteristics and maximum ratings v gs =0v,i s =2a 0.83 1.2 v notes a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 10us, duty cycle < 1%. c.guaranteed by design, not subject to production testing. _ _ _ 36 49 v gs =3.1v , i d =2.25a m ohm 30 40 m ohm v gs =4.0v , i d =2.25a 26 34 m ohm v gs =3.7v , i d =2.25a 27 36 27 23 21 22
STS8207 ver 1.0 www.samhop.com.tw may,07,2012 3 0 0 20 120 100 80 60 40 150 125 100 75 50 25 175 t a - ambient temperature - c dt - percentage of rated power - % derating factor of forward bias safe operating area 0 0 0.5 3 2.5 2 1.5 1 150 125 100 75 50 25 175 t a - ambient temperature - c pt - total power dissipation - w total power dissipation vs. ambient temperature mounted on fr-4 board of 1 inch 2 , 2oz 0.1 1 10 10 0.1 100 v gs =4v single pulse t a =25 c r ds ( on) limit 0.01 forward bias safe operating area v ds - drain to source voltage - v i d - drain current - a transient thermal resistance vs. pulse width 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 0.1 mounted on fr-4 board of 1 inch 2 , 2oz single pulse pw - pulse width - s rth(ch-a) - transient thermal resistance - c/w 1 10 us 100us 1ms 10 m s 1 s dc
STS8207 ver 1.0 www.samhop.com.tw may,07,2012 4 0 0 8 20 16 1 0.8 0.6 0.4 0.2 v ds - drain to source voltage - v i d - drain current - a drain current vs. drain to source voltage 3.7 v 2.5 v 0.01 0 0.1 100 10 1 2.5 2 1.5 1 0.5 v gs - gate to source voltage - v i d - drain current - a forward transfer characteristics 3 25 c 75 c 125 c t a = -25 c -50 1.1 0.9 0.5 150 100 50 0 t ch - channel temperature - c v gs(off) - gate to source cut-off voltage - v gate to source cut-off voltage vs. channel temperature i d = 1.0ma 0.01 0.01 0.1 100 10 1 100 10 1 0.1 i d - drain current - a . y fs . - forward transfer admittance - s forward transfer admittance vs. drain current 1.0 t a =-25 c 75 c 25 c 125 c 0 20 80 60 40 100 10 1 0.1 i d - drain current - a r ds(on) - drain to source on-state resistance - m drain to source on-state resistance vs. drain current v gs = 2.5 v 3.1 v 4.0 v 0 0 15 60 45 30 8 6 4 2 v gs - gate to source voltage - v r ds(on) - drain to source on-state resistance - m drain to source on-state resistance vs. gate to source voltage i d =2.25a 12 10 4.0 v 3.7 v 0.6 0.7 0.8 4 12 3.1 v
STS8207 ver 1.0 www.samhop.com.tw may,07,2012 5 q g - gate charge -nc v gs - gate to drain voltage - v 0.01 0.1 100 10 1 0.6 0.4 0.2 0 v f(s-d) - source to drain voltage - v i f - diode forward current - a source to drain diode forward voltage 0 -50 30 20 10 150 100 50 0 t ch - channel temperature - c r ds(on) - drain to source on-state resistance - m drain to source on-state resistance vs. channel temperature 40 4.0 v 0 0 4 3 2 8 4 2 1 1.2 1.0 0.8 v gs =0v 3.7 v i d = 2.25a 3.1 v v gs = 2.5 v 1.4 50 60 10 i d = 4.5 a v dd = 4.0 v 10 v 16 v 1 0.1 10 100 10 1 i d - drain current - a t d(on) ,t r ,t d(off) ,t f - switching time - ns switching characteristics v dd = 16.0 v v gs =4v r g =6 t d(on) t f 6 v ds - drain to source voltage - v c iss ,c oss ,c rss - capacitance - pf capacitance vs. drain to source voltage t d(off) t r dynamic input characteristics 10 0.1 100 1000 100 10 1 c oss c rss c iss
STS8207 www.samhop.com.tw may,07,2012 6 package outline dimensions tsot 26 ver 1.0 l detail "a" millimeters inches symbols d e 2.692 3.099 2.591 3.000 e1 1.397 1.803 e e1 b 0.300 0.500 c 0.080 0.200 a a1 0.000 0.100 0.700 0.800 l1 l l1 0 o 6 o 0.106 0.122 0.102 0.118 0.055 0.071 0.012 0.020 0.003 0.008 0.000 0.004 0.028 0.032 0 o 6 o min max min max 0.950 ref. d e1 e e1 e b 1 2 3 6 54 a a1 1.900 ref. 0.037 ref. 0.075 ref. 0.300 0.600 0.012 0.024 0.600 ref. 0.023 ref. detail "a"
STS8207 www.samhop.com.tw may,07,2012 7 tsot 26 tape and reel data tsot 26 carrier tape tsot 26 reel sot 26 a 4.00 2.00 0.10 + 0.05 4.00 + 0.10 + 1.00 +0.10 0.00 1.50 +0.10 0.00 1.75 0.10 + 3.50 0.05 + 8.0 + 0.30 a b b 0.25 + 0.05 r0. 3 5 max r0.3 ko 1.5 + 0.1 bo 3.2 + 0.1 section a-a 3.3 + 0.1 5 max r0.3 r0.3 section b-b 178.0 + 0.5 60 + 0.5 9.0 1.50 +1.5 -0 2.2 + 0.5 10.6 13.5 + 0.5 scale 2:1 ver 1.0
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